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SUD50N04-37P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
Limited b y r DS(on) *
100 μ s
1 ms
7
5
4
0.1
0.01
T C = 25 °C
Single P u lse
10 ms
100 ms, DC
3
1
0
0.01
0.1
1
10
100
0
25
50
75
100
125
150
15
12
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich r DS(on) is specified
Safe Operating Area, Junction-to-Case
2.5
2.0
T A - Am b ient Temperat u re (°C)
Current Derating*, Junction-to-Ambient
9
6
3
0
Package Limited
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Current Derating*, Junction-to-Case
T A - Am b ient Temperat u re (°C)
Power Derating*, Junction-to-Ambient
15
12
9
6
3
* The power dissipation P D is based on T J(max) = 175 °C, using
0
junction-to-case thermal resistance, and is more useful in settling the
0
25
50
75
100
125
150
upper dissipation limit for cases where additional heatsinking is
T C - Case Temperat u re (°C)
Power Derating*, Junction-to-Case
Document Number: 69732
S-80109-Rev. B, 21-Jan-08
used. It is used to determine the current rating, when this rating falls
below the package limit.
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